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Georges Pavlidis (Assoc)

Georges Pavlidis is a NRC Postdoctoral Researcher in the Nanoscale Spectroscopy Group. He recently received his Ph.D. at the Georgia Institute of Technology under the supervision of Dr. Samuel Graham (2018). His doctoral research was focused on assessing the reliability of GaN transistors using optical and electrical techniques with high spatial and temporal resolution. His current interests include investigating resistive switching devices by leveraging AFM methods to achieve concurrently high spatial and temporal resolution for the characterization of their electrical, chemical and thermal properties. He is also interested in studying the transport mechanisms in 2D materials such as the dispersion of hyperbolic phonon polaritons in hexagonal Boron Nitride using techniques such as photothermal induced resonance (PTIR).

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Selected Publications

  1. G. Pavlidis, A.M. Hilton, J.L. Brown, E.R. Heller, S. Graham, “Monitoring the Joule Heating Profile of GaN/SiC HEMTs via Cross Sectional Thermal Imaging”, Journal of Applied Physics, Editor’s Pick, Vol. 12, Issue 7, pp. 75705, 2020
  2. G. Pavlidis, L. Yates, D. Kendig, C.F. Lo, H. Marchand, B. Barabadi, S. Graham, “The effect of Superlattices on the thermal performance of GaN/Si HEMTs using near-bandgap thermoreflectance imaging”, IEEE Transactions on Electron Devices, Vol. 67, Issue 3, pp. 822-827, 2020
  3. G. Pavlidis, S.H. Kim, I. Abid, M. Zegaoui, F. Medjdoub, S. Graham, “The Effects of AlN and Copper Back Side Deposition on the Performance of Etched Back GaN/Si HEMTs”, IEEE Electron Device Letters, Vol. 40, Issue 7, pp. 1060-1063, 2019 
  4. A. Cutivet, G. Palvidis, B. Hassan, M. Bouchilaoun, C. Rodriguez, A. Soltani, S. Graham, F. Boone, H. Maher, “Scalable Modeling of Transient Self-Heating of GaN High-Electron-Mobility Transistors Based on Experimental Measurements”, IEEE Transaction on Electron Devices, Vol. 66, Issue 5, pp. 2139-215, 2019
  5. G. Pavlidis, S. Som, J. Barrett, W. Struble, S. Graham, “The impact of temperature on GaN/Si HEMTs under RF operation using gate resistance thermometry”, IEEE Transactions on Electron Devices, Vol. 66, Issue 1, pp. 330-336, 2019 
  6. G. Pavlidis, E. R. Heller, D. Kendig, S. Graham, “Transient Thermal Characterization of AlGaN/GaN HEMTs Under Pulsed Biasing”, IEEE Transactions on Electron Devices, Vol. 65, Issue 5, pp. 1753-1758, 2018
  7. E. Tamdogan, G. Pavlidis, S. Graham, M. Arik, “A Comparative Study on the Junction Temperature Measurements of LEDs With Raman Spectroscopy, Microinfrared (IR) Imaging, and Forward Voltage Methods” IEEE Transactions on Components, Packaging and Manufacturing Technology, Vol. 8, Issue 11, pp. 1914-1922, 2018
  8. J. Dallas, G. Pavlidis, B. Chatterjee, J.S. Lundh, M. Ji, J. Kim, T. Kao, T. Detchprohm, R.D. Dupuis, S. Shen, S. Graham, S. Choi “Thermal Characterization of Gallium Nitride p-i-n Diodes”, Applied Physics Letters, Vol. 112, Issue 7, 2018
  9. G. Pavlidis, S. Pavlidis, E. R. Heller, E. A. Moore, R. Vetury, and S. Graham, "Characterization of AlGaN/GaN HEMTs Using Gate Resistance Thermometry," IEEE Transactions on Electron Devices, vol. 64, pp. 78-83, 2017.
  10. P. M. Campbell, A. Tarasov, C. Joiner, M.Y. Tsai, G. Pavlidis, S. Graham, W. J. Ready, E. Vogel, “Field-effect transistors based on wafer-scale, highly uniform few-layer p-type WSe2”, Nanoscale, vol. 8, pp. 2268-2276, 2015 


Spontaneous current constriction in threshold switching devices

Jonathan Goodwill, Georg Ramer, Dasheng Li, Brian Hoskins, Georges Pavlidis, Jabez J. McClelland, Andrea Centrone, James A. Bain, Marek Skowronski
Threshold switching devices exhibit extremely non-linear current-voltage characteristics, which are of increasing importance for a number of applications
Created July 30, 2019, Updated June 30, 2022