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Evaluating the thermal performance of perovskite SrSnO3 field effect transistors

Published

Author(s)

Bivek Bista, Prafful Golani, Fengdeng Liu, Tristan Truttmann, Georges Pavlidis, Andrea Centrone, Bharat Jalan, Steven Koester

Abstract

Given the ever increasing, global electricity consumption, improving the efficiency and reliability of high-power electronics is of paramount importance. Ultra-wide band gap (> 3.4 eV) semiconductors have shown the potential to be used in the next generation of power electronics due to their high breakdown field and mobility. Specifically, high-quality growth of doped strontium stannate perovskite-oxide (SSO) has been recently demonstrated. The thermal properties of this novel material, however, have not been fully investigated and could be the limiting factor (excessive junction temperatures) to maximize device performance. In this study, high resolution (≈ 410 nm) transient thermoreflectance imaging (TTI) is used to obtain temperature maps of SSO two-terminal devices with varying channel width (10 µm to 20 µm). The results show that the device thermal resistance increases by ≈ 21 % due to the increase in thermal spreading resistance with channel width. The observed trend is further confirmed via transient thermal analysis where the thermal time constant is shown to increase from 20.9 µs to 29.9 µs. Overall, the active layer thicknesses and device geometry (length and width), must be carefully considered to improve device performance and lifetime.
Conference Dates
May 30-June 2, 2023
Conference Location
Orlando, FL, US
Conference Title
The Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems

Keywords

Thermal Characterization, Wide Bandgap Semiconductors, Thermoreflectance, Perovskites

Citation

Bista, B. , Golani, P. , Liu, F. , Truttmann, T. , Pavlidis, G. , Centrone, A. , Jalan, B. and Koester, S. (2023), Evaluating the thermal performance of perovskite SrSnO3 field effect transistors, The Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, Orlando, FL, US, [online], https://doi.org/10.1109/ITherm55368.2023.10177570, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=936090 (Accessed April 18, 2024)
Created July 13, 2023, Updated July 24, 2023