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Frederick Meisenkothen

Fred Meisenkothen joined the Microanalysis Research Group in the Fall of 2012. The focus of his research will be atom probe tomography.
      
For the past eleven years, Dr. Meisenkothen has been employed, through UES, Inc,. as a research scientist at the Air Force Research Laboratory, Materials Characterization Facility located at Wright Patterson Air Force Base, OH. As one of the three scientists responsible for the day-to-day scientific and technical operations in the facility, he functioned daily as a hands-on, jack-of-all-trades research scientist in microscopy and spectroscopy techniques that included; scanning electron microscopy (SEM), wavelength dispersive spectroscopy (EPMA), energy dispersive spectroscopy (EDS), transmission electron microscopy (TEM), x-ray diffraction (XRD), optical / polarized light microscopy, electron backscatter diffraction (EBSD), and focused ion beam microscopy (FIB). In this capacity, Dr. Meisenkothen had the opportunity to work on dozens of projects of relevance to the U.S. Air Force and to industry. His work covered a full spectrum of materials including metals, ceramics, semi-conductors, and composites, that ranged in size from the macro-scale to the nano-scale.
      
Dr. Meisenkothen earned his Ph.D. in Materials Science and Engineering under Professor Hamish Fraser (transmission electron microscopy, TiAl Based Alloys) and his M.S. in Materials Science (Metallurgy) under Professor John E. Morral (modeling multi-phase, multi-component diffusion in NiCrAl materials). He also holds a B.S. in Mechanical Engineering and a trade school certification in Manufacturing Technology / Machine Tool operation. Prior to graduate school, Dr. Meisenkothen was employed as a machine design engineer for Gerber Technologies.
      
Dr. Meisenkothen's work has been published in references such as the ASM Handbook and in peer reviewed journals such as Nature and Scripta Materialia.

Publications

Towards superconductivity in p-type delta-doped Si/Al/Si heterostructures

Author(s)
Aruna N. Ramanayaka, Hyun Soo Kim, Joseph A. Hagmann, Roy E. Murray, Ke Tang, Neil M. Zimmerman, Curt A. Richter, Joshua M. Pomeroy, Frederick Meisenkothen, Huairuo Zhang, Albert Davydov, Leonid A. Bendersky
In pursuit of superconductivity in p-type silicon (Si), we are using a single atomic layer of aluminum (Al) sandwiched between a Si substrate and a thin Si epi

Quantifying Atom-scale Dopant Movement and Electrical Activation in Si:P Monolayers

Author(s)
Xiqiao Wang, Joseph A. Hagmann, Pradeep N. Namboodiri, Jonathan E. Wyrick, Kai Li, Roy E. Murray, Frederick Meisenkothen, Alline F. Myers, Michael D. Stewart, Richard M. Silver
Doped semiconductor structures with ultra-sharp dopant confinement, minimal lattice defects, and high carrier concentrations are essential attributes in the
Created May 31, 2018