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David S Simons

Scientist Emeritus

David Simons is a physicist in the Materials Measurement Science Division at the National Institute of Standards and Technology in Gaithersburg, Maryland. He received his undergraduate education at the Carnegie Institute of Technology and his Ph.D. in solid state physics from the University of Illinois. After a postdoctoral appointment at the University of Illinois he served as a chemist in the mass spectrometry group at the Knolls Atomic Power Laboratory in Schenectady, New York for three years before moving to the National Bureau of Standards (now NIST) in 1979. During his career Dr. Simons has specialized in the applications of secondary ion mass spectrometry to microelectronics and to nuclear forensics. He currently serves as a consultant to the International Atomic Energy Agency and to the Department of Energy's National Nuclear Security Administration.  He was a NIST Fellow and is a Fellow of AVS-The Science and Technology Society.  He has served as the co-chair of the Fifth International Conference on Secondary Ion Mass Spectrometry and of the AVS Topical Conferences on Quantitative Surface Analysis.

Awards

Department of Commerce Bronze Medal Award - in recognition of outstanding research in quantitative chemical microanalysis

Department of Commerce Silver Medal Award - for exceptional leadership and innovative accomplishments in quantitative microbeam mass spectrometry

Department of Commerce Gold Medal Award (shared) - for delivery of the measurement science and standards that are the foundation for unequaled U.S. capabilities in support of nuclear non-proliferation

NIST Chemical Science and Technology Laboratory Technical Achievement Award (shared) - for instrumental neutron activation analysis for certification of ion-implanted arsenic in silicon

NIST Judson C. French Award (shared) - for the development and critical evaluation of an instrumental neutron activation analysis method for the determination of arsenic in silicon

 

Publications

Targeted enrichment of 28Si thin films for quantum computing

Author(s)
Ke Tang, Hyun S. Kim, Aruna N. Ramanayaka, David S. Simons, Joshua M. Pomeroy
We report on the growth of isotopically enriched 28Si epitaxial films with precisely controlled enrichment levels, ranging from natural abundance ratio of 92.2%
Created May 22, 2019, Updated April 20, 2020