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Daniel Gopman (Fed)
Physicist
Dr. Daniel B. Gopman is a Staff Physicist in the Materials Science and Engineering Division at the National Institute of Standards and Technology. He earned his Ph.D. in Physics from New York University, where he researched the switching properties of nanostructured spintronic devices. Dr. Gopman currently leads the Magnetic Thin Films project, focusing on advancing measurement science and technology for magnetic thin film multilayers and patterned magnetic devices. He has made significant contributions to the field of spintronics, including the development of novel magnetic materials and devices, and has published numerous papers in top-tier scientific journals. Dr. Gopman is a founding organizer of the US Government Working Group on Magnetic Tunnel Junction technologies and a member of the IEEE Magnetics Society. He has also served as a reviewer for several international scientific journals and has received several awards for his work.
Patents
Pb(ZrxTi1-x)3 (PZT) / Cobalt-Nickel Heterostructure with Voltage-Tuneable Perpendicular Magnetization, Patent No. 9,952,293
Susceptometer and process for determining magnetic susceptibility, Patent No. 9,714,991
Projects
High Speed Metrology for Magnetoelectronic Devices and Models
News
Zero Field Switching (ZFS) Effect in a Nanomagnetic Device
University of Minnesota Team Receives $3.1 Million Federal Grant to Improve Electronics
Awards
2023 IEEE Senior Member Status
2022 George Abraham Outstanding Paper Award for "Advanced Perpendicular Magnetic Tunnel Junctions for Computation in Random Access Memory," presented at the Government Microcircuit Applications & Critical Technology Conference
2021 NIST Technology Maturation Award for "Ultrahigh Density in Memory Compute Chips using Advanced Magnetic Memory Devices"
2015 NIST Material Measurement Laboratory Outstanding Post-doc Accolade
2014 NIST NRC Post-doctoral Associateship
2005 Boren National Security Education Program Scholarship (Novosibirsk, Russia)
