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Daniel Gopman (Fed)

Physicist

Daniel B. Gopman, PhD, is a staff scientist in the Materials Science and Engineering Division at the National Institute of Standards and Technology. He earned his PhD in Physics from New York University, where he performed research on the switching properties of nanostructured spintronic devices. He presently heads the Magnetic Thin Films project,  focusing on advancing measurement science and technology for magnetic thin film multilayers and patterned magnetic devices. Joining NIST in 2014 as a postdoctoral associate, he enhanced ferromagnetic resonance measurements for magnetostrictive thin films on piezoelectric substrates, integrating in-situ substrate poling. By 2016, he transitioned to Staff Scientist, overseeing the Magnetic Engineering Research Facility. This facility features a custom 14-target ultrahigh vacuum thin film sputtering tool and associated magnetic characterization labs. 

Dr. Gopman is a founding organizer of the US Government Working Group on Magnetic Tunnel Junction technologies, a member of the international MRAM Technology Group and a member of the IEEE Magnetics Society (where he is the Chapter Chair for the DC-Metro Area and Vice Chair of the Magnetics Society Standards Committee).

Patents

Pb(ZrxTi1-x)O3 (PZT) / COBALT-NICKEL HETEROSTRUCTURE WITH VOLTAGE-TUNEABLE PERPENDICULAR MAGNETIZATION, Patent No. 9,952,293

Susceptometer and process for determining magnetic susceptibility, Patent No. 9,714,991

Projects 

High Speed Metrology for Magnetoelectronic Devices and Models

News

Zero Field Switching (ZFS) Effect in a Nanomagnetic Device

University of Minnesota Team Receives $3.1 Million Federal Grant to Improve Electronics

University of Minnesota: Researchers Create Spintronics Manufacturing Process That Could Revolutionize Electronics Industry

Awards

2022 George Abraham Outstanding Paper Award for "Advanced Perpendicular Magnetic Tunnel Junctions for Computation in Random Access Memory," presented at the Government Microcircuit Applications & Critical Technology Conference 

2021 NIST Technology Maturation Award for "Ultrahigh Density in Memory Compute Chips using Advanced Magnetic Memory Devices"

2015 NIST Material Measurement Laboratory Outstanding Post-doc Accolade

2014 NIST NRC Post-doctoral Associateship

2005 Boren National Security Education Program Scholarship

News

Publications

Created July 30, 2019, Updated July 25, 2024