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Daniel Gopman (Fed)


Daniel B. Gopman, PhD, is a staff scientist in the Materials Science and Engineering Division at the National Institute of Standards and Technology. He earned his PhD in Physics from New York University, where he performed research on the switching properties of nanostructured spintronic devices. Dr. Gopman joined NIST in 2014 on a NRC postdoctoral fellowship to develop multiferroic heterostructures combining magnetic thin films with piezoelectric actuators. His current research focuses on the development of novel magnetic devices for more effective control of magnetism at the nanoscale. Dr. Gopman is a co-organizer of the US Government Working Group on Magnetic Tunnel Junction technologies and a member of the American Physical Society and the IEEE Magnetics Society (where he is the Chapter Chair for the DC-Metro Area).


2005 Boren National Security Education Program Scholarship

2014 NIST NRC Post-doctoral Associateship

2015 NIST Material Measurement Laboratory Outstanding Post-doc Accolade



Created July 30, 2019, Updated December 8, 2022