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Influence of Electron Doping on the Ground State of (Sr1-xLax)2IrO4
Published
Author(s)
Xiang Chen, Tom Hogan, D. Walkup, Wenwen Zhou, M. Pokharel, Mengliang Yao, Wei Tian, Thomas Z. Ward, Yang Zhao, Daniel E. Parshall, C. Opeil, Jeffrey W. Lynn, Vidya Madhavan, Stephen D. Wilson
Abstract
The evolution of the electronic properties of electron-doped (Sr1-xLax)2IrO4 is experimentally explored as the solubility limit of La is approached. As electrons are introduced, the electronic ground state transitions from a spin-orbit Mott phase into an electronically phase separated state, where long-range magnetic order vanishes beyond x = 0.02 and charge transport remains percolative up to the solubility limit. In particular, the electronic ground state remains inhomogeneous even beyond the collapse of the parent state's long-range antiferromagnetic order, while persistent short-range magnetism survives up to the highest La-Substitution levels. Furthermore, as electrons are doped in Sr2IrO4, we observe the appearance of a low temperature state suggestive of a spin glass phase intermediate to the suppression of antiferromagnetic order. Universalities in the electron-doped phase diagrams of single layer and bilayer Ruddlesden-Popper strontium iridates are discussed.
Chen, X.
, Hogan, T.
, Walkup, D.
, Zhou, W.
, Pokharel, M.
, Yao, M.
, Tian, W.
, Ward, T.
, Zhao, Y.
, Parshall, D.
, Opeil, C.
, Lynn, J.
, Madhavan, V.
and Wilson, S.
(2015),
Influence of Electron Doping on the Ground State of (Sr<sub>1-x</sub>La<sub>x</sub>)<sub>2</sub>IrO<sub>4</sub>, Physical Review B, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=918883
(Accessed October 25, 2025)