TSV REVEAL HEIGHT AND BUMP DIMENSION METROLOGY BY THE TSOM METHOD: FROM NANOMETER TO MICROMETER SCALE

Published

January 23, 2013

Author(s)

Ravikiran Attota, Victor Vertanian, Steve Olson, Robert Edgeworth, Iqbal Ali, Craig Huffman, Pate Moschak, Harry Lazier, Elizabeth Lorenzini

Abstract

The exceptional z-height resolution of TSOM, as well as very fast measurement time, is particularly important for high volume manufacturing. These two attributes make TSOM advantageous for 3D-stacked IC measurements of TSV reveal structures, and C4 bumps and microbumps. This work focuses on the application of TSOM to through-silicon via (TSV) reveal height measurements in the 3-5 micron range, as well as to C4 and micro-bump features. In addition, the sensitivity of the technique to TEOS liner thickness of a few nm in 2 x 40 m TSV’s as well as step coverage will be using simulations.

Conference Dates

March 25-28, 2013

Conference Location

Gaithersburg, MD

Conference Title

Frontiers of Characterization and Metrology for Nanoelectronics

Pub Type

Conferences

Keywords

TSOM, TSV, Cu reveal, nanometrology, 3D metrology, through-focus, optical microscope

Citation

Attota, R. , Vertanian, V. , Olson, S. , Edgeworth, R. , Ali, I. , Huffman, C. , Moschak, P. , Lazier, H. and Lorenzini, E. (2013), TSV REVEAL HEIGHT AND BUMP DIMENSION METROLOGY BY THE TSOM METHOD: FROM NANOMETER TO MICROMETER SCALE, Frontiers of Characterization and Metrology for Nanoelectronics , Gaithersburg, MD (Accessed October 9, 2025)