Cosputtered Nb-Si barrier Josephson junctions for superconductive electronics applications

Published

December 15, 2006

Author(s)

Burm Baek, Paul Dresselhaus, Samuel Benz

Abstract

Junctions using amorphous NbxSi1-x as a barrier have been developed for a wide range of possible applications. By co-sputtering the Nb and Si, both the relative composition and the barrier thickness can be independently controlled. As the Nb content approaches zero, the junctions exhibit a large characteristic voltage, Vc (nearly 2 mV) and exhibit SIS characteristics which have been applied to SQUID applications. Other possible applications of these high Vc junctions include SFQ and conventional voltage standards. At higher Nb content ( 15%), the junctions are more SNS-like with moderate Vc (10 to 150 ??V); these junctions have become the core components in all of NIST?s voltage standard applications. Using this junction technology, excellent run-to-run reproducibility and high quality junction characteristics have been measured over a wide range of critical current density and normal-state resistance.

Proceedings Title

International Superconductive Electronics Conference - Extended Abstracts

Volume

16

Issue

4

Conference Dates

June 10-14, 2007

Conference Location

Washington, DC, USA

Conference Title

International Superconductive Electronics Conference

Pub Type

Conferences

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Keywords

Josephson arrays, Josephson junctions, Superconductor-insulator-superconductor devices, Superconductor-normal-superconductor devices

Citation

Baek, B. , Dresselhaus, P. and Benz, S. (2006), Cosputtered Nb-Si barrier Josephson junctions for superconductive electronics applications, International Superconductive Electronics Conference - Extended Abstracts, Washington, DC, USA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=32688 (Accessed October 9, 2025)