Tanner, S.
, Gray, J.
, Rogers, C.
, Bertness, K.
and Sanford, N.
(2007),
High-Q GaN nanowire resonators and oscillators, Applied Physics Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=32729
(Accessed April 24, 2024)
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High-Q GaN nanowire resonators and oscillators
Published
Author(s)
Shawn M. Tanner, Jason M. Gray, Charles T. Rogers, ,
Abstract
We report high mechanical quality factors Q for GaN nanowire cantilevers grown by molecular beam epitaxy. Nanowires with 30-500 nm diameters and 5-20 υm lengths having resonance frequencies from 400 kHz to 2.8 MHz were measured. Q near room temperature and 10-4 Pa ranged from 2,700 to above 60,000 with most above 10,000. Positive feedback to a piezoelectric stack caused spontaneous nanowire oscillations with Q exceeding 106. Spontaneous oscillations also occured with direct e-beam excitation of unintentionally doped nanowires. Doped nanowires showed no oscillations, consistent with oscillation arising via direct actuation of piezoelectric GaN.Citation
Applied Physics Letters
Volume
91
Issue
203117
Pub Type
Journals
Download Paper
Keywords
GaN, mechanical oscillators, nanowire
Citation
Created November 15, 2007, Updated October 12, 2021