Electrostatically gated Si devices: Coulomb blockade and barrier capacitance

Published

August 10, 2006

Author(s)

Neil M. Zimmerman, Akira Fujiwara, Hiroshi Inokawa, Yasuo Takahashi

Abstract

Using a new device resembling a nano-CCD, and measuring the Coulomb blockade, we identify a new parameter, the "barrier capacitance". We then show how this parameter can be used to learn about the underlying shape of the energy barrier under a gate with a size of a few tens of nm. We observe Coulomb blockade in a device without energy barriers, where the conduction is via diffusive transport; we speculate on the cause of this observation.

Citation

Applied Physics Letters

Volume

89

Issue

052102-1

Pub Type

Journals

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DOI Link

Keywords

barrier capacitance, si, single-electron tunneling

Citation

Zimmerman, N. , Fujiwara, A. , Inokawa, H. and Takahashi, Y. (2006), Electrostatically gated Si devices: Coulomb blockade and barrier capacitance, Applied Physics Letters, [online], https://doi.org/10.1063/1.2240600 (Accessed October 25, 2025)