A significant, practical challenge, which arises in developing computationally efficient physical models for use in computer simulations of microelectronic and optoelectronic devices (e.g., transistors in digital cellular phones and in laser modulators, respectively), is to represent vast amounts of numerical data for transport properties in two or more dimensions in terms of closed form analytic expressions. In this paper, we present a general methodology to achieve the above goal for a class of numerical data in a bounded two-dimensional space. We then apply this methodology to obtain a closed-form analytic expression for the minority electron mobilities at 300 K in p-type Ga1-mAlmAs as functions of the acceptor density, NA, between 1014 cm-3 and 1020 cm-3 and the mole fraction of AlAs, m, between 0.0 and 0.3. This methodology and its associated principles, strategies, regression analyses, and graphics are expected to be applicable to other problems beyond the specific case of minority mobilities addressed in this paper.
Citation: Journal of Research (NIST JRES) -
NIST Pub Series: Journal of Research (NIST JRES)
Pub Type: NIST Pubs
electron mobilities, melding functions, regression analyses, standard deviations