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High Dopant and Carrier Concentration Effects in Gallium Aluminum Arsenide: Band Structure, Effective Carrier Concentrations, and Mobilities

Published

Author(s)

Herbert S. Bennett
Proceedings Title
Proc., International Conference on Surfaces and Interfaces of Mesoscopic Devices
Issue
6
Conference Dates
December 8-13, 1997
Conference Location
Maui, HI

Citation

Bennett, H. (1997), High Dopant and Carrier Concentration Effects in Gallium Aluminum Arsenide: Band Structure, Effective Carrier Concentrations, and Mobilities, Proc., International Conference on Surfaces and Interfaces of Mesoscopic Devices, Maui, HI (Accessed October 10, 2025)

Issues

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Created December 31, 1997, Updated February 17, 2017
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