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Failure Mechanisms and Nondestructive Testing of Power Bipolar and MOS-Gated Transistors
Published
Author(s)
David L. Blackburn
Proceedings Title
Proc., EPE - MADEP '91 Symposium on Materials and Devices for Power Electronics
Issue
6
Conference Dates
September 2-6, 1991
Conference Location
Florence, IT
Pub Type
Conferences
Citation
Blackburn, D.
(1992),
Failure Mechanisms and Nondestructive Testing of Power Bipolar and MOS-Gated Transistors, Proc., EPE - MADEP '91 Symposium on Materials and Devices for Power Electronics, Florence, IT
(Accessed October 28, 2025)