High Q Backside Micromachined CMOS Inductors

Published

August 1, 1999

Author(s)

Mehmet Ozgur, Mona E. Zaghloul, Michael Gaitan

Abstract

Spiral inductors that are fabricated through a CMOS process, are micromachined by using a new post-processing procedure. In this new technique, the inductors are supported mechanically prior to etching with a low-loss host superstrate, and the silicon substrate is selectively etched from the backside. A scalably physical model for such inductors is developed. The results from the model are in good agreement with the measurements. Significant performance improvements are achieved without compromising the mechanical robustness of the fully integrated inductors. By using a 1.2 micro υ CMOS technology, quality factor of 10.5 is measured at 4.6 GHz for 8.9 nH inductor.

Proceedings Title

Proc., 1999 IEEE International Symposium on Circuits and Systems

Conference Location

Orlando, FL, USA

Pub Type

Conferences

Keywords

CMOS, inductors, micromachining, post-processing

Citation

Ozgur, M. , Zaghloul, M. and Gaitan, M. (1999), High Q Backside Micromachined CMOS Inductors, Proc., 1999 IEEE International Symposium on Circuits and Systems, Orlando, FL, USA (Accessed July 3, 2025)