Bennett, J.
and Dagata, J.
(1994),
Ultrashallow Depth Profiling with Time-of-flight Secondary Ion Mass Spectrometry, Journal of Vacuum Science and Technology B
(Accessed January 29, 2026)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Ultrashallow Depth Profiling with Time-of-flight Secondary Ion Mass Spectrometry
Published
Author(s)
J. Bennett,
Abstract
Time-of-flight secondary ion mass spectrometry (TOF-SIMS) is an efficient, sensitive method for characterizing semiconductor surfaces. In addition, TOF-SIMS can be applied in a depth profiling mode allowing qualitative characterization of the top 10?20 nm of material. The utility of TOF-SIMS ultrashallow depth profiling is demonstrated ion GaAs substrates that were passivated with P2S5 solutions and oxidized by exposure to UV/ozone treatment.Citation
Journal of Vacuum Science and Technology B
Volume
12(1)
Pub Type
Journals
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact [email protected].
Created December 31, 1993, Updated October 12, 2021