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Delineation of pn Junctions by Scanning Tunneling Microscopy/Spectroscopy in Air and Ultrahigh Vacuum
Published
Author(s)
Richard M. Silver, John A. Dagata, H. W. Tseng
Abstract
Lateral dopant profiling of cleaved, passivated abrupt GaAs pn junctions using scanning tunneling microscopy/spectroscopy is demonstrated both in ultrahigh vacuum and air. A combination of forward-and reverse-bias imaging and position-dependent tunneling spectroscopy makes it possible to delineate the metallurgical junction location of abrupt asymmetric n(+)p and symmetric n(+)p(+) junctions. The experimental results are shown to be consistent with simulations based on the metal-insulator-semiconductor band-bending model when surface states and bulk transport through the pn junction are properly taken into account in the calculations.
Silver, R.
, Dagata, J.
and Tseng, H.
(1995),
Delineation of pn Junctions by Scanning Tunneling Microscopy/Spectroscopy in Air and Ultrahigh Vacuum, Journal of Vacuum Science and Technology A
(Accessed May 7, 2024)