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PUBLICATIONS

In Situ Raman Spectroscopic Characterization of Compound Semiconductor Free Carrier Concentration

Published

Author(s)

James E. Maslar, C Wang, D C. Oakley

Abstract

Free carrier concentrations in compound semiconductors were determined using Raman spectroscopy. Spectra of selected films were recorded in situ in a chemical vapor deposition reactor operating from room temperature to growth temperature.
Proceedings Title
Technical Digest of IEEE/LEOS 2000 Summer Topics Meetings
Volume
31-32
Conference Dates
July 24-28, 2000
Conference Title
Lasers and Electro-optics Society (Institute of Electrical and Electronics Engineers).
Pub Type
Conferences

Keywords

chemical vapor deposition, compound semiconductors, raman spectroscopy

Citation

Maslar, J. , Wang, C. and Oakley, D. (2000), In Situ Raman Spectroscopic Characterization of Compound Semiconductor Free Carrier Concentration, Technical Digest of IEEE/LEOS 2000 Summer Topics Meetings (Accessed October 7, 2025)

Issues

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Created July 1, 2000, Updated February 17, 2017
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