Characterization of 2.5 Inch Diameter Bulk GaN Grown from Melt-Solution

Published

November 1, 2001

Author(s)

V Soukhoveev, V Ivantsov, Y Melnik, Albert Davydov, Denis Tsvetkov, K Tsvetkova, I Nikitina, A Zubrilov, A Lavrentiev, Vladimir A. Dmitriev

Abstract

Crystal growth from a melt or melt-solution is a widely accepted technique for industrial-scale production of important semiconductor materials. Recently we have demonstrated 50 mm diameter GaN crystals grown by melt-solution technique [1]. The crystals were grown at ambient pressure not exceeding 2 atm at growth temperature of about 900 degrees C. This paper is providing information on material properties of these GaN crystals.

Citation

Physica Status Solidi A-Applications and Materials Science

Volume

188

Issue

No. 1

Pub Type

Journals

Keywords

crystal growth, gallium nitride, semiconductors

Citation

Soukhoveev, V. , Ivantsov, V. , Melnik, Y. , Davydov, A. , Tsvetkov, D. , Tsvetkova, K. , Nikitina, I. , Zubrilov, A. , Lavrentiev, A. and Dmitriev, V. (2001), Characterization of 2.5 Inch Diameter Bulk GaN Grown from Melt-Solution, Physica Status Solidi A-Applications and Materials Science (Accessed October 8, 2025)