Optical and Structural Studies of Strain-Relaxed InxGa1-xN Films on GaN/sapphire with 0.04

Published

February 19, 2017

Author(s)

Larry Robins, J T. Armstrong, Mark D. Vaudin, Charles E. Bouldin, Joseph Woicik, Albert J. Paul, W. R. Thurber, Ryna B. Marinenko

Abstract

The structures of a set of InxGa1-xN films grown by atmospheric-pressure MOCVD onGaN buffer layers on c-plane sapphire, with compositions in the range 0.04 < x < 0.47, were characterized by x-ray diffraction (XRD). Several films were also examined by extended x-ray absorption fine structure (EXAFS). The optical properties of the films were investigated by room-temperature optical transmittance and cathodoluminescence spectroscopies. The average indium fraction (xavg) in each film was measured to high accuracy by wavelength-dispersive x-ray spectroscopy (WDS) in an electron microprobe. GaN/sapphire and InN/sapphire films were also examined by XRD, WDS, and optical spectroscopy for comparison with the InxGa1-xN alloys.

Citation

Physical Review B (Condensed Matter and Materials Physics)

Pub Type

Journals

Keywords

cathodoluminescence, compositional inhomogeneity, EXAFS, indium gallium nitride, indium nitride, optical absorption, optical transmittance, phase separation, x-ray diffraction

Citation

Robins, L. , Armstrong, J. , Vaudin, M. , Bouldin, C. , Woicik, J. , Paul, A. , Thurber, W. and Marinenko, R. (2017), Optical and Structural Studies of Strain-Relaxed InxGa1-xN Films on GaN/sapphire with 0.04<x<0.47, Physical Review B (Condensed Matter and Materials Physics) (Accessed October 10, 2025)