Bennett, H.
and Hung, H.
(2005),
Dependence of Electron Density on Fermi Energy in Compensated N-type Gallium Antimonide, Journal of Applied Physics, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=31933
(Accessed October 10, 2025)
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Dependence of Electron Density on Fermi Energy in Compensated N-type Gallium Antimonide
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Abstract
The majority electron density as a function of the Fermi energy is calculated in zinc blende, compensated n-type GaSb for donor densities between 1016 cm-3 and 1019 cm-3. The compensation acceptor density is 1016 cm-3. These calculations solve the charge neutrality equation self-consistently for a four-band model (three conduction sub-bands at 'u, L, and X and one equivalent valence band at 'u ) of GaSb. Our calculations assume parabolic densities of states and thus do not treat the density-of-states modifications due to high concentrations of dopants, many body effects, and non-parabolicity of the bands. Even with these assumptions, the results are important for interpreting optical measurements such as Raman measurements that are proposed as a non-destructive method for wafer acceptance tests.Citation
Journal of Applied Physics
Volume
98
Issue
10
Pub Type
Journals
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Created November 10, 2005, Updated October 12, 2021