Birdwell, A.
, Littler, C.
, Glosser, R.
, Rebien, M.
, Henrion, W.
, Stauss, P.
and Behr, G.
(2008),
Evidence for an Indirect Gap in B−FeSi2 Epilayers by Photoreflectance Spectroscopy, Applied Physics Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=33076
(Accessed October 10, 2025)
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Evidence for an Indirect Gap in B−FeSi2 Epilayers by Photoreflectance Spectroscopy
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Author(s)
, , R Glosser, M Rebien, W Henrion, P Stauss, G Behr
Abstract
Photoreflectance spectra obtained from epitaxial films of semiconducting Β-FeSi2 exhibit complex line shapes resulting from a variety of optical transitions. While we have previously established a direct gap at 0.934{plus or minus}0.002 eV at 75 K, we find an additional weak structure at a lower energy. We attribute the origin of this spectral feature to indirect transitions assisted by the emission of a phonon. From our analysis, we determine an indirect gap energy of 0.823{plus or minus}0.002 eV at 75 K.Citation
Applied Physics Letters
Volume
92
Issue
211901
Pub Type
Journals
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Created May 27, 2008, Updated February 19, 2017