NOTICE: Due to a lapse in annual appropriations, most of this website is not being updated. Learn more.
Form submissions will still be accepted but will not receive responses at this time. Sections of this site for programs using non-appropriated funds (such as NVLAP) or those that are excepted from the shutdown (such as CHIPS and NVD) will continue to be updated.
An official website of the United States government
Here’s how you know
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Band offsets of atomic-layer-deposited Al2O3 on GaAs and the effects of surface treatment.
Published
Author(s)
Nhan V. Nguyen, Oleg A. Kirillov, Weirong Jiang, Wenyong Wang, John S. Suehle, P. D. Ye, Y. Xuan, N. Goel, Kwang-Woo Choi, Wilman Tsai
Abstract
In this letter we report the band offsets of the Al/Al2O3/GaAs structure determined by internal photoemission and spectroscopic ellipsometry. The energy barrier height at the Al2O3 and sulfur-passivated GaAs interface is found to be 3.0 eV, which is different from those obtained on unpassivated or NH4OH-treated GaAs. At the Al metal gate and Al2O3 interface, all samples yield the same zero-field barrier height of 2.9 eV. With an optical band gap of 6.4 eV for thin Al2O3 determined from spectroscopic ellipsometry, the band alignments at both Al2O3 interfaces can be configured.
Citation
Applied Physics Letters
Volume
93
Pub Type
Journals
Keywords
Internal Photoemission Spectroscopy, Al/Al<sub>2</sub>O<sub>3</sub>/GaAs devices, band offsets, band alighments, ellipsometry, band gap
Nguyen, N.
, Kirillov, O.
, Jiang, W.
, Wang, W.
, Suehle, J.
, Ye, P.
, Xuan, Y.
, Goel, N.
, Choi, K.
and Tsai, W.
(2008),
Band offsets of atomic-layer-deposited Al2O3 on GaAs and the effects of surface treatment., Applied Physics Letters
(Accessed October 9, 2025)