Optical Flatness Metrology for 300 mm Silicon Wafers

Published

April 1, 2005

Author(s)

Ulf Griesmann, Quandou (. Wang, T D. Raymond

Abstract

At the National Institute of Standards and Technology (NIST), we are developing two interferometric methods for measuring the thickness variation and flatness of free-standing and chucked silicon wafers with diameters up to 300mm. The eXtremely accurate CALIBration InterferometeR (XCALIBIR) is a precision phase measuring interferometer with an operating vacelength of 633nm and a test beam of 300 mm diameter. XCALIBIR is used to evaluate the flatness of chucked wafers. NIST''s infrared interferometer (IR2) is a phase measuring interferometer that operates at 1.55um and is used to measure the thickness variation of free-standing 300 mm silicon wafers.

Proceedings Title

American Institute of Physics Proceedings of the 2005 Conference on Characterization and Metrology for ULSI Technology

Volume

788

Conference Dates

March 15-28, 2005

Conference Location

Dallas, TX

Conference Title

American Institute of Physics Conference on Characterization and Metrology for ULSI Technology

Pub Type

Conferences

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Keywords

300mm silicon wafers, wafer flatness, wafer thickness variation (TTV and GBIR)

Citation

Griesmann, U. , Wang, Q. and Raymond, T. (2005), Optical Flatness Metrology for 300 mm Silicon Wafers, American Institute of Physics Proceedings of the 2005 Conference on Characterization and Metrology for ULSI Technology, Dallas, TX, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=822272 (Accessed October 10, 2025)