Bayne, S.
, Portnoy, W.
, Rohwein, G.
and Hefner Jr., A.
(2000),
MOS-Gated Thyristors (MCTs) for Repetitive High Power Switching, IEEE Transactions on Power Electronics, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=17444
(Accessed May 18, 2024)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
MOS-Gated Thyristors (MCTs) for Repetitive High Power Switching
Published
Author(s)
Stephen B. Bayne, W. M. Portnoy, G. J. Rohwein,
Citation
IEEE Transactions on Power Electronics
Volume
16
Pub Type
Journals
Download Paper
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created December 31, 1999, Updated October 12, 2021