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PUBLICATIONS

MOS-Gated Thyristors (MCTs) for Repetitive High Power Switching

Published

Author(s)

Stephen B. Bayne, W. M. Portnoy, G. J. Rohwein, Allen R. Hefner Jr.
Citation
IEEE Transactions on Power Electronics
Volume
16
Pub Type
Journals

Download Paper

Local Download
Electronics and Advanced communications

Citation

Bayne, S. , Portnoy, W. , Rohwein, G. and Hefner Jr., A. (2000), MOS-Gated Thyristors (MCTs) for Repetitive High Power Switching, IEEE Transactions on Power Electronics, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=17444 (Accessed October 17, 2025)

Issues

If you have any questions about this publication or are having problems accessing it, please contact [email protected].

Created December 31, 1999, Updated October 12, 2021
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