Organic Semiconductor Structure and Chemistry From Near-Edge X-Ray Absorption Fine Structure (NEXAFS) Spectroscopy

Published

August 1, 2005

Author(s)

Dean M. DeLongchamp, Eric K. Lin, Daniel A. Fischer

Abstract

The ability to measure the structural development of organic semiconductor films and correlate it to the electrical characteristics of organic devices such as thin film transistors (OTFTs) is needed to facilitate the commercialization of this technology. Synchrotron-based Near-Edge X-ray Absorption Fine Structure (NEXAFS) spectroscopy is a powerful tool that meets this need because it can non-destructively reveal both the structure and chemistry of thin organic films. The density of bonds involving Carbon, Nitrogen, Oxygen, and Fluorine can be quantified, a depth profile can be developed, and bond orientation can be determined.Here, we outline the principles of NEXAFS experimentation and data analysis with an emphasis on their application to organic semiconductor thin films. NEXAFS spectra of model organic semiconductors such as pentacene and poly(3-hexylthiophene) (P3HT) are used to demonstrate how NEXAFS can enhance understanding of the complex processing structure relationships of semiconductor film formation and identify processing methods that may optimize device performance.

Proceedings Title

Organic Field-Effect Transistors IV

Conference Dates

August 8-9, 2005

Conference Location

Sandiego, CA

Conference Title

Proceedings of SPIE--the International Society for Optical Engineering

Pub Type

Conferences

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Keywords

flexible electronics, NEXAFS, organic semiconductors, organic thin film transistor, P3HT, pentacene, poly(3-hexylthiophene), X-Ray absorption spectroscopy

Citation

DeLongchamp, D. , Lin, E. and Fischer, D. (2005), Organic Semiconductor Structure and Chemistry From Near-Edge X-Ray Absorption Fine Structure (NEXAFS) Spectroscopy, Organic Field-Effect Transistors IV, Sandiego, CA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=852528 (Accessed April 25, 2024)