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PUBLICATIONS

Reactive epitaxy of beryllium on Si(1 1 1)-(7 x 7)

Published

Author(s)

Dustin Hite, Shu-Jung Tang, Phillip T. Sprunger

Abstract

Scanning tunneling microscopy (STM) and photoelectron spectroscopy (PES) have been used to investigate the nucleation, growth, and structure of beryllium on Si(1 1 1)-(7 x 7). STM indicates that a chemical reaction occurs at temperatures as low as 120 K, resulting in a nano-clustered morphology, presumed to be composed of a beryllium silicide compound. Upon annealing to higher temperatures, PES data indicate that beryllium diffuses into the selvage region. High temperature annealing (1175 K) results in the formation of a universal ring cluster structure suggesting a Be?Si bond length less than 2.5 A, in agreement with previous calculations regarding hypothetical Be2Si.
Citation
Chemical Physics Letters
Volume
367
Pub Type
Journals

Keywords

growth, silicide formation, surface
Electromagnetics

Citation

Hite, D. , Tang, S. and Sprunger, P. (2003), Reactive epitaxy of beryllium on Si(1 1 1)-(7 x 7), Chemical Physics Letters (Accessed October 14, 2025)

Issues

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Created December 31, 2002, Updated October 12, 2021
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