Nguyen, N.
, Xu, M.
, Kirillov, O.
, Ye, P.
, Wang, C.
, Cheung, K.
and Suehle, J.
(2010),
Band Offsets of Al<sub>2</sub>O<sub>3</sub> / In<sub>1-x</sub>Ga<sub>x</sub>As (x = 0.53 and 0.75) and the Effects of Post-Deposition Annealing, Applied Physics Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=903535
(Accessed October 11, 2025)
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Band Offsets of Al2O3 / In1-xGaxAs (x = 0.53 and 0.75) and the Effects of Post-Deposition Annealing
Published
Author(s)
, Min Xu, , Pei D. Ye, C Wang, ,
Abstract
Band offsets at the interfaces of InxGa1-xAs / Al2O3 / Al where x = 0.53 and x = 0.75 were determined by internal photoemission and spectroscopic ellipsometry. The photoemission energy threshold at the InxGa1-xAs / Al2O3 interface was found to be insensitive to the Indium composition, but shifted to a lower energy after a post-deposition annealed at high temperatures. Sub-threshold electron photoemission was also observed for the annealed sample attributing to interfacial layer formation during the annealing process.Citation
Applied Physics Letters
Volume
96
Pub Type
Journals
Download Paper
Keywords
Al2O3, InGaAs, ALD, internal photoemission, ellipsometry, MOS, band offset, band alignment
Citation
Issues
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Created February 2, 2010, Updated February 19, 2017