An analysis methodology basd on charge pumping (CP) measurement was applied to extract the spatial depth profile of traps in the SiO2/HfO2 gate stacks. This analysis indicates that by changing CP measurement parameters it is possible to probe traps at different depth inside the dielectric. Spatial profile of traps reveals three separate regions of trap location: in SiO2 interface, SiO2/HfO2 interaction region, and an HfO2 film.
Citation: IEEE Electronic letters
Pub Type: Journals
charge pumping, HfO2, trap profile