We develop a simple experimental approach to remove bulk trap contributions from charge pumping data collected on devices which suffer from large amounts of bulk dielectric electron trapping. The approach is more desirable and easier to implement than other simulation/device modeling based approaches. We demonstrate the approach using HfO2 based MOSFETs. Additionally, we provide an explanation for the smaller than expected bulk trap contribution to charge pumping current.
Proceedings Title: International Integrated Reliability Workshop Final Report
Conference Dates: October 16-21, 2011
Conference Location: South Lake Tahoe, CA
Conference Title: International Integrated Reliability Workshop
Pub Type: Conferences