Ryan, J.
, Bittel, B.
, Lenahan, P.
, Fronheiser, J.
and Lelis, A.
(2013),
Observation of Interface/Near Interface Defects in 4H SiC MOSFETs With a New Electrically Detected Magnetic Resonance Technique, Proceedings of the International Conference on Silicon Carbide and Related Materials, Cleveland, OH
(Accessed October 13, 2025)
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Observation of Interface/Near Interface Defects in 4H SiC MOSFETs With a New Electrically Detected Magnetic Resonance Technique
Published
Author(s)
, Brad Bittel, Pat Lenahan, Jody Fronheiser, Aivars Lelis
Abstract
We study 4H SiC MOSFETs with a new electrically detected magnetic resonance technique (EDMR) we call spin dependent charge pumping (SDCP). Our SDCP results demonstrate a tremendous improvement in sensitivity over other EDMR techniques. Additionally SDCP has the ability to access defects distributed over a wider energy range of the SiC bandgap.Proceedings Title
Proceedings of the International Conference on Silicon Carbide and Related Materials
Conference Dates
September 11-16, 2011
Conference Location
Cleveland, OH
Conference Title
International Conference on Silicon Carbide and Related Materials
Pub Type
Conferences
Citation
Issues
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Created January 1, 2013, Updated February 19, 2017