Controlled dielectrophoretic nanowire self-assembly using atomic layer deposition and suspended microfabricated electrodes

Published

May 28, 2012

Author(s)

Kristine A. Bertness, Joseph J. Brown, Alicia I. Baca, Victor M. Bright

Abstract

Effects of design and materials on the dielectrophoretic self-assembly of individual gallium nitride nanowires (GaN NWs) onto microfabricated electrodes have been experimentally investigated. The use of TiO₂ surface coating generated by atomic layer deposition (ALD) improves dielectrophoretic assembly yield of individual GaN nanowires on microfabricated structures by as much as 67%. With a titanium dioxide coating, individual nanowires were placed across suspended electrode pairs in 46% of tests (147 out of 320 total), versus 28% of tests (88 out of 320 total tests) that used uncoated GaN NWs. An additional result from these tests was that suspending the electrodes 2.75 υm above the substrate corresponded with up to 15.8% improvement in overall assembly yield over that of electrodes fabricated directly on the substrate.

Citation

Nanotechnology

Volume

23

Issue

24

Pub Type

Journals

Download Paper

https://doi.org/10.1088/0957-4484/23/24/245301

Keywords

dielectrophoresis, GaN nanowires, self-assembly

Citation

Bertness, K. , Brown, J. , Baca, A. and Bright, V. (2012), Controlled dielectrophoretic nanowire self-assembly using atomic layer deposition and suspended microfabricated electrodes, Nanotechnology, [online], https://doi.org/10.1088/0957-4484/23/24/245301 (Accessed October 22, 2025)