Voigt, C.
, Moxim, S.
, Campbell, J.
, Akturk, A.
and Ryan, J.
(2026),
Defects involved in TDDB-stressed SiC MOSFET, 2025 IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, US, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=960620 (Accessed October 6, 2026)
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Defects involved in TDDB-stressed SiC MOSFET
Published
Author(s)
, , , Akin Akturk,
Abstract
We report electrically-detected magnetic resonance, electron spin resonance, charge pumping and transfer characteristics of SiC lateral MOSFETs before and after accelerated TDDB stress at 9 MV/cm field. The different responses measured via each technique provide insight to the rich interplay between defect creation and defect charging that underlies dynamic reliability responses of these devices.Conference Dates
October 5-9, 2025
Conference Location
South Lake Tahoe, CA, US
Conference Title
2025 IEEE International Integrated Reliability Workshop (IIRW)
Pub Type
Conferences
Download Paper
Keywords
SiC, MOSFET, Reliability, SDCP, CP
Citation
Issues
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Created April 28, 2026, Updated October 5, 2026