Broadband Dielectric Spectroscopic (BDS) Studies of Material Evolution and Reliability in Integrated Systems

Published

May 22, 2026

Author(s)

Christopher E. Sunday, Emmanuel Iwuoha, Yaw Obeng

Abstract

Recent advances in technological and materials innovations have shifted the architecture of integrated circuits from two-dimensional planar to three dimensional (3D) systems, with stacked chips. The performance demands of these 3D-SIC devices seem to be at odds with the reliability needs because while the emerging devices are expected to operate at higher current densities, they have lower voltage tolerances at higher electric fields. With this change, the reliability of the electronic circuitry has shifted from being transistor-dominated to interconnect- dominated and this comes with challenges such as resistivity changes; stress induced unexplained early failures; electromigration, etc. The problems are mostly materials related. Unfortunately, traditional metrology has been unable to adequately address the measurement needed to in-situ characterize the underlying failure mechanism. We have introduced and demonstrated the application of broadband radio frequency dielectric spectroscopy (BDS)-based metrology, in addressing some of these metrology gaps. In this paper, we review some BDS applications to understanding failure mechanisms in disparate reliability issues of emerging 3D integrated electronic devices.

Citation

N/A

Publisher Info

N/A, Cambridge, MA

Pub Type

Book Chapters

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https://doi.org/10.1016/B978-0-443-26606-5.00009-7

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Keywords

broadband, dielectric, spectroscopy, 3D-IC, reliability

Citation

Sunday, C. , Iwuoha, E. and Obeng, Y. (2026), Broadband Dielectric Spectroscopic (BDS) Studies of Material Evolution and Reliability in Integrated Systems, N/A, N/A, Cambridge, MA, [online], https://doi.org/10.1016/B978-0-443-26606-5.00009-7, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=923633 (Accessed June 4, 2026)

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