McFadden, A.
, Goswami, A.
, Seas, M.
, McRae, C.
, Zhao, R.
, Pappas, D.
and Palmstrom, C.
(2020),
Epitaxial Al/GaAs/Al tri-layers fabricated using a novel wafer-bonding technique, Journal of Applied Physics, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=930880
(Accessed November 19, 2025)
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Epitaxial Al/GaAs/Al tri-layers fabricated using a novel wafer-bonding technique
Published
Author(s)
, Aranya Goswami, Michael Seas, , , , Christopher J. Palmstrom
Abstract
Epitaxial Al/GaAs/Al structures having controlled thickness of high-quality GaAs and pristine interfaces have been fabricated using a wafer-bonding technique. III-V semiconductor/Al structures are grown by molecular beam epitaxy on III-V semiconductor substrates and bonded to silicon and sapphire. Selective etching is used to remove the III-V substrate followed by surface cleaning and superconductor regrowth, resulting in epitaxial Al/GaAs/Al tri-layers on sapphire or silicon substrates. Structures are characterized with reflection high energy electron diffraction, atomic force microscopy, X-ray photoelectron spectroscopy, transmission electron microscopy, and X-ray diffraction. Applications of these structures to the field of quantum information processing is discussed.Citation
Journal of Applied Physics
Pub Type
Journals
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Keywords
Epitaxy, surface science, interfaces, Josephson junctions, tunnel junctions
Citation
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Created September 15, 2020, Updated September 29, 2025