Weakly anisotropic residual contact stress in silicon demonstrated by electron backscatter diffraction and expanding cavity models

Published

December 7, 2018

Author(s)

Robert F. Cook, Lawrence Henry Friedman

Abstract

The residual stress field surrounding an elastic-plastic spherical indentation contact in Si is determined by electron backscatter diffraction (EBSD)-based experimental measurements and expanding hemispherical cavity-based models. The experiments provide support for indentations as test vehicles for assessment of EBSD as a two-dimensional deformation mapping method but make clear that selection of coordinate axes is critical to determining a correct representation of a stress field. The use of principal stress coordinates rather than the conventional Cartesian coordinates is required in cases in which the direction of the stress field is not aligned with Cartesian axes. In particular, the use of principal coordinates in analysis of a spherical indentation stress field in Si removed misleading artefacts from the Cartesian-based field and revealed only a weak effect of Si crystalline elastic anisotropy. The experimental results are supported by isotropic and anisotropic finite element analysis models.

Citation

Applied Physics Letters

Pub Type

Journals

Download Paper

https://doi.org/10.1063/1.5055859

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Keywords

stress, EBSD, principal, Cartesian, expanding cavity model

Citation

Cook, R. and Friedman, L. (2018), Weakly anisotropic residual contact stress in silicon demonstrated by electron backscatter diffraction and expanding cavity models, Applied Physics Letters, [online], https://doi.org/10.1063/1.5055859, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=926511 (Accessed November 14, 2025)