Low barrier height in a ZnO nanorods/NbSe2 heterostructure prepared by van der Waals epitaxy

Published

September 9, 2021

Author(s)

Yeonhoo Kim, Roxanne Tutchton, Ren Liu, Sergiy Krylyuk, Jian-Xin Zhu, Albert Davydov, Young Joon Hong, Jinkyoung Yoo

Abstract

Two-dimensional (2D) materials as contacts for semiconductor devices have attracted great attention due to minimizing Fermi level pinning. Schottky–Mott physics has been widely employed to design 2D material-based electrodes and to elucidate their contact behavior. In this study, we revealed that charge transfer across a 2D/semiconductor heterointerface and materials characteristics besides work function should be accounted for in fabrication of electrodes based on 2D materials. Our density function theory (DFT) calculations predicted that charge transfer between ZnO and NbSe2 lowers barrier height at the heterojunction and that surface states of ZnO provide an additional conduction channel in the ZnO/NbSe2 heterostructures. Electrical characterizations of the ZnO/NbSe2 heterostructures showed Ohmic-like behavior as predicted by the DFT calculations, opposed to the prediction based on the Schottky–Mott model.

Citation

APL Materials

Volume

9

Pub Type

Journals

Download Paper

https://doi.org/10.1063/5.0052596

Local Download

Keywords

2D materials, electrical contacts, Schottky barrier, heterostructures

Citation

Kim, Y. , Tutchton, R. , Liu, R. , Krylyuk, S. , Zhu, J. , Davydov, A. , Hong, Y. and Yoo, J. (2021), Low barrier height in a ZnO nanorods/NbSe2 heterostructure prepared by van der Waals epitaxy, APL Materials, [online], https://doi.org/10.1063/5.0052596, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=932518 (Accessed October 12, 2025)