DARPA Organic Interconnect Characterization

Published

January 27, 2020

Author(s)

Dylan Williams, Richard Chamberlin, Jerome Cheron, Sam Chitwood, Ken Willis, Brad Butler, Farhang Yazdani

Abstract

We report on a study of interconnects fabricated on organic and silicon interposers used to connect state-of-the art digital, analog and RF chiplets commissioned by the U.S. Defense Advanced Research Projects Agency (DARPA). The interconnects were characterized with state-of- the-art on-wafer measurement methods developed at the National Institute of Standards and Technology (NIST) and then simulated with the Cadence Sigrity* simulation software package. The two-port, four-port and eight-port measurements and calibrations were performed to frequencies as high as 110 GHz using custom on-wafer calibrations to improve accuracy. We discuss the measurement and simulation methodologies and present detailed comparisons of the measurement and simulation results.

Proceedings Title

DesignCon 2020 Proceedings

Conference Dates

January 28-30, 2020

Conference Location

Santa Clara, CA, US

Conference Title

DesignCon 2020

Pub Type

Conferences

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Keywords

On-wafer measurement, hybrid solver, simulation

Citation

Williams, D. , Chamberlin, R. , Cheron, J. , Chitwood, S. , Willis, K. , Butler, B. and Yazdani, F. (2020), DARPA Organic Interconnect Characterization, DesignCon 2020 Proceedings, Santa Clara, CA, US, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=929182 (Accessed October 14, 2025)