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Bottom-Up Copper Filling of Large Scale Through Silicon Vias for MEMS Technology
Published
Author(s)
Daniel Josell, Thomas P. Moffat, L A. Menk, E Baca, M Blain, A Smith, Jason Dominguez, J McClain, P D. Yeh, A E. Hollowell
Abstract
An electrodeposition process for void-free bottom-up filling of sub-millimeter scale through silicon vias (TSVs) with Cu is detailed. The 600 m deep and nominally 125 m diameter metallized vias were filled with Cu in less than 7 hours under potentiostatic control. The electrolyte is comprised of 1.25 mol/L CuSO4 0.25 mol/L CH3SO3H with polyether and halide additions that selectively suppress metal deposition on the free surface and side walls. A brief qualitative discussion of the procedures used to identify and optimize the bottom-up void-free feature filling is presented.
Citation
Journal of the Electrochemical Society
Pub Type
Journals
Keywords
superfill, copper, interconnect, TSV, through silicon via
Josell, D.
, Moffat, T.
, Menk, L.
, Baca, E.
, Blain, M.
, Smith, A.
, Dominguez, J.
, McClain, J.
, Yeh, P.
and Hollowell, A.
(2018),
Bottom-Up Copper Filling of Large Scale Through Silicon Vias for MEMS Technology, Journal of the Electrochemical Society
(Accessed October 2, 2025)