Characterization of Deep-Levels in Silicon Nanowires by Low-Frequency Noise Spectroscopy

Published

September 13, 2011

Author(s)

Abhishek Motayed, Sergiy Krylyuk, Albert Davydov

Abstract

We have used low-frequency noise (LFN) spectroscopy to measure generation-recombination (G-R) centers in boron-doped silicon nanowires (SiNWs), which were grown using vapor-liquid-solid technique with Au catalyst. Drain current noise power spectral density was measured for SiNW back-gated field-effect transistors from 320 K to 100 K. The LFN spectra showed distinct Lorentzian behavior with well-defined corner-frequency indicative of single G-R center in the bandgap. From the temperature-dependent LFN measurement we clearly identified a single deep level at 0.39 eV from the bandedge. Estimated electron and hole capture cross-sections were 9.5 ×10-17 cm2 and 1.4 ×10-16 cm2, respectively and trap concentration of 2.0 ×1012 cm-3. This study demonstrates the potential of the LFN spectroscopy in characterization of deep-levels in nanowires in general.

Citation

Applied Physics Letters

Volume

99

Pub Type

Journals

Keywords

Au Deep Levels, Capture Cross-Sections, Generation-Recombination Centers, Low-Frequency Noise, Silicon Nanowire FET

Citation

Motayed, A. , Krylyuk, S. and Davydov, A. (2011), Characterization of Deep-Levels in Silicon Nanowires by Low-Frequency Noise Spectroscopy, Applied Physics Letters (Accessed October 6, 2025)