Structural and electrical analysis of epitaxial 2D/3D vertical heterojunctions of monolayer MoS2 on GaN

Published

August 4, 2017

Author(s)

Albert Davydov, Terrance P. O'Regan, Andrew A. Herzing, Dimitry Ruzmetov, Robert A. Burke, Kehao Zhang, A. Glen Birdwell, DeCarlos Taylor, E Byrd, Joshua A. Robinson, Tony G. Ivanov, M R. Neupane, S D. Walck

Abstract

Integrating two-dimensional (2D) and three-dimensional (3D) semiconductors to realize vertical heterojunctions with novel electronic and optoelectronic properties is gaining interest from the device community. In this study, we utilize an approach that does not require 2D material transfer, integrates the 3D substrate for future device concepts, and aims to achieve epitaxial vertical heterojunctions with low defect interfaces necessary for efficient vertical transport. Single epitaxial layer of MoS2 with approximately 2 μm domains are grown by powder vaporization on GaN substrates forming a vertical 2D/3D heterojunction.

Citation

Applied Physics Letters

Pub Type

Journals

Keywords

MoS2, 2D materials, GaN, semiconductor, epitaxy, thin films

Citation

Davydov, A. , O'Regan, T. , Herzing, A. , Ruzmetov, D. , Burke, R. , Zhang, K. , , A. , Taylor, D. , Byrd, E. , Robinson, J. , Ivanov, T. , Neupane, M. and Walck, S. (2017), Structural and electrical analysis of epitaxial 2D/3D vertical heterojunctions of monolayer MoS2 on GaN, Applied Physics Letters (Accessed October 15, 2025)