Calibration of Effective Tunneling Bandgap in GaAsSb/InGaAs for improved TFET Performance Prediction

Published

November 3, 2016

Author(s)

Quentin Smets, Anne S. Verhulst, Salim El Kazzi, David J. Gundlach, Curt A. Richter, Anda Mocuta, Nadine Collaert, Aaron Thean, Marc Heyns

Abstract

The effective bandgap for heterojunction band-to-band tunneling (Eg,eff) is a crucial design parameter for heterojunction TFET. However, there is significant uncertainty on Eg,eff, especially for In0.53Ga0.47As/GaAs0.5Sb0.5. This makes TFET performance prediction difficult.We calibrate Eg,eff by fabricating heterojunction p+/i/n+ diodes, comparing the simulated and the measured I-V and C-V curves, while taking Eg,eff as a fitting parameter. Our calibration significantly reduces the uncertainty on Eg,eff compared to the range found in literature. Comparison with previous work on highly doped heterojunction diodes suggests dopant-dependent bandgap narrowing reduces Eg,eff, and therefore significantly impacts the performance of highly doped TFET.

Citation

IEEE Transactions on Electron Devices

Volume

63

Issue

33

Pub Type

Journals

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DOI Link

Keywords

semiconductor, field effect transistor, tunnel FET, heterojunction

Citation

Smets, Q. , Verhulst, A. , El Kazzi, S. , Gundlach, D. , Richter, C. , Mocuta, A. , Collaert, N. , Thean, A. and Heyns, M. (2016), Calibration of Effective Tunneling Bandgap in GaAsSb/InGaAs for improved TFET Performance Prediction, IEEE Transactions on Electron Devices, [online], https://doi.org/10.1109/TED.2016.2604860 (Accessed October 8, 2025)