Josell, D.
, Silva, M.
and Moffat, T.
(2016),
Superconformal Bottom-Up Cobalt Deposition in High Aspect Ratio Through Silicon Vias, ECS Transactions
(Accessed April 30, 2024)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Superconformal Bottom-Up Cobalt Deposition in High Aspect Ratio Through Silicon Vias
Published
Author(s)
, ,
Abstract
This work demonstrates void-free cobalt filling of 56 um tall, annual Through Silicon Vias (TSVs) using a mechanism that couples suppression breakdown and surface topography to achieve controlled bottom-up deposition. The chemistry, a Watts electrolyte containing a dilute suppressing additive, and processes are described. This work extends understanding and application of the additive-derived S-NDR mechanism, including previous demonstrations of superconformal filling of TSVs with nickel, copper, zinc and gold.Citation
ECS Transactions
Pub Type
Journals
Keywords
cobalt, superfill, superconformal, TSV, through silicon via
Citation
Created September 23, 2016, Updated April 20, 2017