Matthew Brubaker

Publications

Measuring Dislocation Line Charge in GaN using Scanning Precession Electron Diffraction

July 26, 2025

Author(s)

Edwin Supple, Kristine Bertness, Matthew Brubaker, Alexana Roshko

Dislocations in GaN have been known for some time to accumulate line charge along their length, affecting the electrical and optical properties of the material

Semiconductor thermal and electrical properties decoupled by localized phonon resonances

May 10, 2023

Author(s)

Bryan Spann, Joel Weber, Matthew Brubaker, Todd E. Harvey, LINA YANG, Hossein Honarvar, Chia-Nien Tsai, Andrew Treglia, MINHYEA LEE, MAHMOUD HUSSEIN, Kris A. Bertness

Thermoelectric materials convert heat into electricity through thermally driven charge transport in solids or vice versa for cooling. To compete with

Direct Growth and Fabrication of Tungsten Coated GaN Nanowire Probes on Cantilevers for Scanning Probe Microscopy

May 13, 2022

Author(s)

Kristen Genter, Matthew Brubaker, Samuel Berweger, Jonas Gertsch, Kris A. Bertness, Pavel Kabos, Victor Bright

Gallium nitride nanowires (NWs) grown on silicon-on-insulator wafers by means of selective area epitaxy are directly integrated into scanning probe cantilever

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Patents (2018-Present)

Core-Shell Nanofin Vertical Switch and High-Voltage Switching

NIST Inventors

Kris A. Bertness and Matthew Brubaker

A core-shell nanofin vertical switch performs high-voltage switching and includes: an n-type GaN nanofin core including: an n-type drift layer; an n-type channel; and an n-type source; a p-type nanofin shell surrounding the n-type GaN nanofin core at an interface surface of the n-type GaN nanofin

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Matthew Brubaker (Fed)

Publications

Patents (2018-Present)