Rapid and Accurate C-V Measurements

Published

October 1, 2016

Author(s)

Jihong Kim, Pragya Shrestha, Jason Campbell, Jason Ryan, David M. Nminibapiel, Joseph Kopanski, Kin P. Cheung

Abstract

We report a new technique for the rapid measurement of full capacitance-voltage (C-V) characteristic curves. The displacement current from a 100 MHz applied sine-wave, which swings from accumulation to strong inversion, is digitized directly using an oscilloscope from the metal-oxide- semiconductor (MOS) capacitor under test. A C-V curve can be constructed directly from this data but is severely distorted due to non-ideal behavior of real measurement systems. The key advance of this work is to extract the system response function using the same measurement set-up and a known MOS capacitor. The system response correction to the measured C-V curve of the unknown MOS capacitor can then be done by simple deconvolution. No de-skewing and/or leakage current correction is necessary, making it a very simple and quick measurement. Excellent agreement between the new fast C-V method and C-V measured conventionally by an LCR meter is achieved. The total time required for measurement and analysis is approximately 2 seconds, which is limited by our equipment.

Citation

IEEE Transactions on Electron Devices

Volume

63

Issue

10

Pub Type

Journals

Download Paper

https://doi.org/10.1109/TED.2016.2586483

Local Download

Keywords

MOS devices, Capacitance measurement, C-V measurement, Fast C-V measurement, Transient measurement

Citation

Kim, J. , Shrestha, P. , Campbell, J. , Ryan, J. , Nminibapiel, D. , Kopanski, J. and Cheung, K. (2016), Rapid and Accurate C-V Measurements, IEEE Transactions on Electron Devices, [online], https://doi.org/10.1109/TED.2016.2586483, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=921598 (Accessed October 21, 2025)