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Introduction of a DC Bias into a High-Q Superconducting Microwave Cavity
Published
Author(s)
Rimberg J. Alex, Fei Chen, Adam J. Sirois, Raymond Simmonds
Abstract
We report a technique for applying a dc voltage or current bias to the center conductor of a high-quality factor superconducting microwave cavity without significantly disturbing selected cavity modes. This is accomplished by incorporating dc bias lines into the cavity at specific locations. The measured S-matrix parameters of the system are in good agreement with theoretical predictions and simulations. We find that the quality factor of the cavity degrades by less than 1% under the application of a dc bias.
Alex, R.
, Chen, F.
, Sirois, A.
and Simmonds, R.
(2011),
Introduction of a DC Bias into a High-Q Superconducting Microwave Cavity, Applied Physics Letters, [online], https://doi.org/10.1063/1.3573824
(Accessed October 2, 2025)