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PUBLICATIONS

In situ spectroscopic study of the plastic deformation of amorphous silicon under non-hydrostatic conditions

Published

Author(s)

Yvonne B. Gerbig, Chris A. Michaels, Robert F. Cook, Jodie E. Bradby

Abstract

Indentation-induced plastic deformation of amorphous silicon (a-Si) thin films was studied by in situ Raman imaging of the deformed contact region of an indented sample, employing a Raman spectroscopy-enhanced instrumented indentation technique (IIT). The occurrence and evolving spatial distribution of changes in the a-Si structure caused by processes, such as polyamorphization and crystallization, induced by indentation loading were observed. The obtained experimental results are linked with previously published work on the plastic deformation of a-Si under hydrostatic compression and shear deformation to establish a model for the deformation behavior of a-Si under indentation loading.
Citation
Physical Review B
Volume
92
Pub Type
Journals

Download Paper

https://doi.org/10.1103/PhysRevB.92.214110

Keywords

Raman spectroscopy, in situ , indentation, amorphous silicon
Semiconductors and Metrology

Citation

Gerbig, Y. , Michaels, C. , Cook, R. and Bradby, J. (2015), In situ spectroscopic study of the plastic deformation of amorphous silicon under non-hydrostatic conditions, Physical Review B, [online], https://doi.org/10.1103/PhysRevB.92.214110 (Accessed October 1, 2025)

Issues

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Created December 17, 2015, Updated November 10, 2018
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