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NanoFab Tool: Unaxis Shuttleline Inductively Coupled Plasma (ICP) Etcher

Photograph of the Unaxis Shuttleline inductively coupled plasma etcher.

Photograph of the Unaxis Shuttleline inductively coupled plasma etcher.

The Unaxis Shuttleline inductively coupled plasma (ICP) etcher is a general purpose chlorine reactive ion etcher. The high power ICP source combined with low vacuum operating pressure provides users with smooth anisotropic etch feature depths ranging from several micrometers to a few nanometers. The system can accommodate substrates ranging from 150 mm diameter wafers down to small pieces.

Specifications/Capabilities

  • Inductively coupled plasma (ICP) power source: up to 2500 W at 2.4 MHz.
  • Radio Frequency (RF) power source: up to 300 W at 13.56 MHz.
  • Unique process gases: chlorine and boron trichloride.
  • Anisotropic etching of silicon.

Usage Information

Supported Sample Sizes

  • Maximum wafer diameter: 150 mm (6 in).
  • Wafer diameters: 75 mm (3 in), 100 mm (4 in), and 150 mm (6 in).
  • Small pieces supported: Yes.
Created June 22, 2014, Updated November 22, 2019