The Unaxis Shuttleline inductively coupled plasma (ICP) etcher is a general purpose chlorine reactive ion etcher. The high power ICP source combined with low vacuum operating pressure provides users with smooth anisotropic etch feature depths ranging from several micrometers to a few nanometers. The system can accommodate substrates ranging from 150 mm diameter wafers down to small pieces.
Inductively coupled plasma (ICP) power source: up to 2500 W at 2.4 MHz.
Radio Frequency (RF) power source: up to 300 W at 13.56 MHz.
Unique process gases: chlorine and boron trichloride.
Anisotropic etching of silicon.
Supported Sample Sizes
Maximum wafer diameter: 150 mm (6 in).
Wafer diameters: 75 mm (3 in), 100 mm (4 in), and 150 mm (6 in).