Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

NanoFab Tool: SPTS Omega c2L Rapier Deep Silicon Etcher

Photograph of the SPTS Omega c2L Rapier deep silicon etcher.

The SPTS Omega c2L Rapier deep silicon etcher is an inductively coupled plasma (ICP) etching system used for etching deep features in silicon. The tool uses a fast switching Bosch process that produces smooth sidewall profiles while etching silicon up to 30 µm per minute. The manual load system can accommodate substrates ranging from 100 mm diameter wafers down to small pieces.


  • Silicon etch rate: up to 30 µm / min.
  • Etch selectivity:
    • Silicon to silicon oxide = 100 to 1.
    • Silicon to photoresist: = 50 to 1.
  • Inductively coupled plasma (ICP) power source: up to 3000 W at 2.4 MHz.
  • Process Gases: Ar, N2, O2, C4F8 and SF6
  • Radio Frequency (RF) power source: up to 500 W at 13.56 MHz.

Usage Information

Supported Sample Sizes

  • Maximum wafer diameter: 100 mm (4 in).
  • Small pieces supported: Yes.

Typical Applications

  • Microelectromechanical systems (MEMS).
  • Nanoelectromechanical systems (NEMS).
  • Through silicon via (TSV) for three dimensional integration.
  • Microfluidic devices.
Created June 22, 2014, Updated October 6, 2023