NanoFab Tool: Sandvik LPCVD Amorphous and Polycrystalline Silicon
The Sandvik low pressure chemical vapor deposition (LPCVD) polysilicon furnaces supports amorphous and polycrystalline silicon deposition in the NanoFab. The furnace stack allows the deposition of n typed doped (phosphine) and undoped polysilicon films on substrates ranging from small chips to wafer diameters up to 200 mm. All samples require SC1 and SC2 cleans prior to processing.
Automatic recipe controller using Variable Parameter Table (VPT)
Maximum Temperature: 650 °C.
Maximum Deposition Thickness: 2 µm.
Doped (phosphine) polysilicon
Wafer diameters: 75 mm (3 in), 100 mm (4 in), 150 mm (6 in), and 200 mm (8 in)