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NanoFab Tool: Sandvik LPCVD Amorphous and Polycrystalline Silicon

Sandvik Anneal Furnaces

Photo of the Sandvik anneal furnaces

Credit: NIST

The Sandvik low pressure chemical vapor deposition (LPCVD) polysilicon furnaces supports amorphous and polycrystalline silicon deposition in the NanoFab. The furnace stack allows the deposition of n typed doped (phosphine) and undoped polysilicon films on substrates ranging from small chips to wafer diameters up to 150 mm. All samples require SC1 and SC2 cleans prior to processing.


  • Automatic recipe controller using Variable Parameter Table (VPT)
  • Maximum Temperature: 650 °C.  
  • Maximum Deposition Thickness: 2 µm.
  • Standard processes:
    • Undoped polysilicon
    • Doped (phosphine) polysilicon
  • Wafer diameters: 75 mm (3 in), 100 mm (4 in), and 150 mm (6 in)
  • Small pieces supported: Yes

Typical Applications

  • Conducting layer (doped)
  • Piezo resistive gauges and thermocouples
  • Gate Transistor
  • Insulating layer (undoped)
  • High purity mask
  • Fabry-Perot interferometer
Created April 10, 2019, Updated July 27, 2023