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NanoFab Tool: Reactive Ion Etcher Unaxis 790 Right

Photograph of the Unaxis 790 reactive ion etcher.

The Unaxis 790 reactive ion etcher (RIE) is a general purpose parallel plate plasma etching system which uses ionized fluorocarbon gases and oxygen to etch polymer and dielectric materials. It can also use argon to physically etch metals. The large chamber can accommodate substrates ranging from 200 mm diameter wafers down to small pieces.

Specifications/Capabilities

  • Radio frequency (RF) power source: up to 500 W at 13.56 MHz.
  • Electrode temperature range: 0 °C to 70 °C.
  • Unique process gases: trifluormethane (CHF3), tetrafluoromethane (CF4), sulfur hexafluoride, argon, and oxygen.
  • Reactive ion etching of silicon, silicon oxide and silicon nitride.

Usage Information

Supported Sample Sizes

  • Maximum wafer diameter: 200 mm (8 in).
  • Small pieces supported: Yes.

Typical Applications

  • Anisotropic thin film etching.
  • Photoresist descum.
  • Silicon nitride membrane fabrication.
  • Physical etching of metals.
Created June 22, 2014, Updated August 12, 2020